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 JMnic
Product Specification
Silicon PNP Power Transistors
2SB1149
DESCRIPTION With TO-126 package DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For use in operating from IC without predriver ,such as hammer driver
PINNING(See Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Ta=25ae PD Total power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 15 150 -55~150 ae ae Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -8 -3.0 -5.0 1.3 W UNIT V V V A A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-1.5A ;IB=-1.5mA IC=-1.5A ;IB=-1.5mA VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1.5A ; VCE=-2V IC=-3A ; VCE=-2V 2000 1000 MIN TYP. -0.9 -1.5
2SB1149
SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
MAX -1.2 -2.0 -10 -2.0 15000
UNIT V V |I A mA
Switching times ton tstg tf Turn-on time Storage time Fall time IC=-1.5A ; IB1=-IB2=-1.5mA VCCO -40V;RL=27| 0.5 2.0 1.0 |I |I |I s s s
hFE-1 Classifications M 2000-5000 L 3000-7000 K 5000-15000
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1149
Fig.2 Outline dimensions
3


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